Infineon IMZA65R048M1H: A 650V CoolMOS™ Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switch is a critical component whose performance directly impacts overall efficacy. The Infineon IMZA65R048M1H stands out as a premier solution, a 650V CoolMOS™ power transistor engineered to meet these stringent challenges in applications ranging from server and telecom SMPS to industrial drives and renewable energy systems.

This device belongs to Infineon's revolutionary CoolMOS™ CFD7 series, which represents a significant leap in superjunction (SJ) MOSFET technology. The core innovation lies in its exceptional combination of low specific on-state resistance (R DS(on)) and drastically reduced switching losses. With a maximum R DS(on) of just 48 mΩ, the IMZA65R048M1H minimizes conduction losses, allowing for more efficient power transfer and reduced heat generation. This is particularly vital for improving the efficiency curve at full load conditions.

However, the true differentiator of the CFD7 technology is its performance during switching events. The transistor incorporates an integrated fast body diode and optimized internal cell structure. This design drastically reduces reverse recovery charge (Q rr), a major source of switching losses and electromagnetic interference (EMI) in hard-switching topologies like PFC and half-bridge circuits. The result is smoother and faster switching, which enables designers to push switching frequencies higher. Increased operating frequency allows for the use of smaller passive components like inductors and capacitors, directly contributing to higher power density and more compact system designs.

Furthermore, the 650V voltage rating provides a robust safety margin for operation off universal mains inputs (85 V AC to 305 V AC), enhancing system reliability in the face of voltage spikes and transients. The IMZA65R048M1H is also designed for ease of use, featuring a low gate charge (Q G) which simplifies drive circuit design and reduces the stress on the gate driver IC.

In summary, the Infineon IMZA65R048M1H is not merely a component but a key enabler for the next generation of high-efficiency power supplies. Its blend of low conduction and switching losses empowers engineers to break traditional design trade-offs, achieving unprecedented levels of efficiency and power density.

ICGOOODFIND: The Infineon IMZA65R048M1H is a top-tier 650V superjunction MOSFET that sets a new benchmark for high-efficiency power conversion. Its core advantage lies in its superior switching performance driven by the CoolMOS™ CFD7 technology and integrated fast diode, making it an ideal choice for high-frequency, high-density SMPS designs across industrial, computing, and telecom sectors.

Keywords: CoolMOS™ CFD7, High-Efficiency, Low Switching Losses, Power Density, Superjunction MOSFET