Infineon BSC070N10NS5: A High-Performance OptiMOS™ Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the forefront of this innovation is Infineon Technologies' BSC070N10NS5, a standout member of the OptiMOS™ 5 family that sets a new benchmark for performance in low-voltage applications. This N-channel power MOSFET, with a 100V drain-source voltage rating, is engineered to deliver exceptional efficiency and rugged reliability in a compact package.

A key strength of the BSC070N10NS5 lies in its ultra-low typical on-state resistance (R DS(on)) of just 7.0 mΩ. This remarkably low resistance is the primary factor behind its superior switching performance. By minimizing conduction losses, the MOSFET operates cooler and more efficiently, which is critical for improving the overall energy efficiency of a system. This characteristic makes it an ideal choice for high-current applications, including synchronous rectification in switched-mode power supplies (SMPS), motor control circuits, and DC-DC converters.

Furthermore, the device features outstanding switching characteristics and a low gate charge (Q G). The optimized gate design allows for faster switching speeds, which significantly reduces switching losses—a common challenge in high-frequency operations. This combination of low R DS(on) and fast switching capability ensures that the BSC070N10NS5 can handle demanding workloads while maintaining thermal stability, thereby enhancing system longevity and reliability.

Packaged in the space-saving, thermally efficient SuperSO8 (PG-TDSON-8) housing, this MOSFET also offers improved thermal performance and power density. The advanced package technology facilitates better heat dissipation, allowing designers to create more compact and powerful end-products without compromising on thermal management.

ICGOODFIND: The Infineon BSC070N10NS5 OptiMOS™ 5 power MOSFET is a top-tier solution for designers seeking to maximize efficiency in power conversion systems. Its blend of ultra-low R DS(on), fast switching speed, and excellent thermal properties in a small form factor makes it a pivotal component for next-generation high-efficiency applications.

Keywords:

Power MOSFET

Low RDS(on)

High-Efficiency

Switching Applications

OptiMOS™ 5