Infineon IRF540ZPBF N-Channel Power MOSFET: Key Specifications and Application Circuits

The Infineon IRF540ZPBF is a benchmark N-channel enhancement mode Power MOSFET that has become a staple in power electronics design. Renowned for its robustness and efficiency, it is widely used in switching applications where high speed and low on-state resistance are critical.

Key Specifications

The IRF540ZPBF's performance is defined by a set of key electrical characteristics:

Drain-Source Voltage (V_DS): 100 V. This rating makes it suitable for a wide range of intermediate voltage applications, including 24V and 48V systems.

Continuous Drain Current (I_D): 33 A at a case temperature (T_C) of 25°C. This high current handling capability allows it to control significant power loads.

On-State Resistance (R_DS(on)): 44 mΩ (max) at V_GS = 10 V and I_D = 27 A. This low R_DS(on) is crucial for minimizing conduction losses and improving overall system efficiency, as it reduces the voltage drop across the MOSFET and the heat generated when it is turned on.

Gate-Source Voltage (V_GS): ±20 V. This provides a comfortable margin for gate driving, though it is typically driven by standard logic level signals (e.g., 5V, 12V) via a driver circuit.

Fast Switching Speed: With a typical input capacitance (C_iss) of 1800 pF, it requires a proper gate driver to achieve fast switching transitions, which is essential for reducing switching losses in high-frequency applications.

Application Circuits

The primary function of the IRF540ZPBF is as a high-speed switch. Two fundamental application circuits are:

1. Low-Side Switch Configuration

This is the most common circuit. The MOSFET is placed between the load and ground. When a sufficient voltage is applied to the gate (typically 10V for full enhancement), the device turns on, completing the circuit and allowing current to flow through the load to ground. When the gate voltage is removed, the MOSFET turns off. This configuration is ideal for:

DC Motor Speed Control (PWM): The MOSFET is switched by a Pulse Width Modulation (PWM) signal from a microcontroller to vary the average power delivered to the motor.

Relay or Solenoid Drivers: Used to turn larger inductive loads on and off.

LED Dimming: Controlling high-power LED arrays.

Crucially, when driving inductive loads like motors or solenoids, a flyback diode must be placed in reverse bias across the load to protect the MOSFET from voltage spikes generated when the current is suddenly interrupted.

2. High-Side Switch Configuration

In this setup, the MOSFET is placed between the power supply (V_CC) and the load. While more complex to drive, it allows for complete control of the load's power connection. Turning the MOSFET on connects the load to V_CC, and turning it off disconnects it entirely. Driving the high-side switch requires a gate voltage that is higher than the source voltage, which is often achieved using a specialized gate driver IC or a bootstrap circuit.

ICGOOODFIND

The Infineon IRF540ZPBF remains a highly reliable and cost-effective solution for a vast array of power switching tasks. Its excellent balance of high voltage, high current, and low on-resistance ensures efficient operation in applications from motor control to power supply units. Proper attention to gate driving and protection circuits is key to unlocking its full potential and ensuring long-term reliability.

Keywords:

Power MOSFET

Switching

RDS(on)

Low-Side Switch

Gate Driver